South Korean giant, Samsung, claims that it has developed the smallest and most powerful DRAM Chip to date based on 10-nano with its “second generation” 8 Giga 10-nano chip, widening its lead over competitors in this sector. Samsung also announced that it will move most of its current DRAM production capacity to 10-nano chips in 2018.
According to Reuters, Samsung’s president of Memory Business, Gyoyoung Jin, said that this “aggressive production expansion would accommodate strong market demand” and solidify the company’s market position in the long term.
The new chips are 15 percent more energy efficient and will run 10 percent faster than their predecessors, launched less than two years ago. For end-users, this will also represent cheaper RAM for their computers, as the productivity of the new chips is up 30 percent, meaning that now—with its 10-nanometers technology—Samsung can build more of the chips in the same amount of time.
That’s why Samsung is “accelerating its plans for much faster introductions of next-generation DRAM chips and systems, including DDR5, HBM3, LPDDR5, and GDDR6, for use in enterprise servers, mobile devices, supercomputers, HPC systems, and high-speed graphics cards,” said the company’s official statement.
Along with this announcement, Samsung stated its determination to build more of the first-generation chips to better fill jammed-up supply channels, news not so welcomed by rivals, Toshiba and Intel.